期刊
APPLIED PHYSICS LETTERS
卷 81, 期 6, 页码 1008-1010出版社
AMER INST PHYSICS
DOI: 10.1063/1.1498499
关键词
-
In most Cu(In,Ga)Se-2 thin films used for solar cells, there usually exist interfaces lying about 0.1 to 0.2 mum below surfaces. We report on convergent-beam electron diffraction and energy-dispersive x-ray spectroscopy study of the microstructure and chemical composition of the surface region in Cu(In,Ga)Se-2 thin films. We find that the surface region and the bulk are structurally similar, with no ordered defect chalcopyrite structure observed. However, their composition is slightly different, indicating that they can have different point defect physics. Our results suggest that the subinterfaces and the bulk absorber may form homojunctions. (C) 2002 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据