期刊
APPLIED PHYSICS LETTERS
卷 81, 期 7, 页码 1246-1248出版社
AMER INST PHYSICS
DOI: 10.1063/1.1499753
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Wurtzite InN films were grown on a thick GaN layer by metalorganic vapor phase epitaxy. Growth of a (0001)-oriented single crystalline layer was confirmed by Raman scattering, x-ray diffraction, and reflection high energy electron diffraction. We observed at room temperature strong photoluminescence (PL) at 0.76 eV as well as a clear absorption edge at 0.7-1.0 eV. In contrast, no PL was observed, even by high power excitation, at similar to1.9 eV, which had been reported as the band gap in absorption experiments on polycrystalline films. Careful inspection strongly suggests that a wurtzite InN single crystal has a true bandgap of 0.7-1.0 eV, and the discrepancy could be attributed to the difference in crystallinity. (C) 2002 American Institute of Physics.
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