期刊
PHYSICAL REVIEW B
卷 66, 期 7, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.66.073303
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We find that at intermediate temperatures, the metallic temperature dependence of the conductivity sigma(T) of two-dimensional electrons in silicon is described well by a recent interaction-based theory of Zala [Phys. Rev. B 64, 214204 (2001)]. The tendency of the slope sigma(-1)dsigma/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Comparing theory and experiment, we arrive at a conclusion that the instability, unexpectedly, originates from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon.
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