4.6 Article

Defect engineered d0 ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

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JOURNAL OF APPLIED PHYSICS
卷 118, 期 7, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4928952

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  1. Department of Science and Technology (DST), Government of India through INSPIRE Faculty Award [IFA12-ENG-09]

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Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V-0(+)) defects, obtained from various spectroscopic measurements, suggests that such V-0(+) defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d(0) ferromagnetism and optical properties of ITOs. (C) 2015 AIP Publishing LLC.

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