期刊
IEEE ELECTRON DEVICE LETTERS
卷 23, 期 9, 页码 517-519出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2002.802604
关键词
capacitor; degradation; ferroelectric thin film; grain boundary; hydrogen; Pb(Zr,Ti)O-3 (PZT)
The electrical properties of the thin-film ferroelectric capacitors are known to degrade severely when exposed to hydrogen. In this study, we could directly measure the effects of grain boundary on the hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O-3 (PZT) thin films by the location of the top Pt electrode either inside the grains or at the grain boundary. A strong relationship between the grain boundary and the electrical properties of ferroelectric capacitors as a result of hydrogen annealing was found. The degradation of the electrical properties in thin-film ferroelectric capacitors after hydrogen annealing is mainly due to the presence of the grain boundary in the ferroelectric thin films.
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