期刊
JOURNAL OF APPLIED PHYSICS
卷 117, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4920926
关键词
-
资金
- Sandia National Laboratories Laboratory Directed Research and Development program
- Lockheed Martin Corporation, for the United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al0.7Ga0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al0.7Ga0.3N. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据