4.4 Article Proceedings Paper

Strain sensors based on magnetostrictive GMR/TMR structures

期刊

IEEE TRANSACTIONS ON MAGNETICS
卷 38, 期 5, 页码 2826-2828

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2002.802466

关键词

giant magnetoresistance (GMR); magnetic tunneling junctions (MTJ); magnetostriction; sensors

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This paper investigates magnetic layer structures suitable for devices measuring mechanical responses such as stress, strain and pressure. Results for giant magnetoresistiance (GMR) multilayers and magnetic tunneling junctions (MTJs) intentionally prepared either with magnetostrictive Fe50Co50 materials or with amorphous Fe-based alloys serving as sensing (or free) layers is discussed in view of possible applications. For MTJs prepared ex-situ with an amorphous FeCoSiB, free layer MR ratios of 33% are obtained leading to gauge factors GF = (DeltaR/R)/Deltaepsilon on the order of 300.

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