期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 38, 期 5, 页码 2826-2828出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2002.802466
关键词
giant magnetoresistance (GMR); magnetic tunneling junctions (MTJ); magnetostriction; sensors
This paper investigates magnetic layer structures suitable for devices measuring mechanical responses such as stress, strain and pressure. Results for giant magnetoresistiance (GMR) multilayers and magnetic tunneling junctions (MTJs) intentionally prepared either with magnetostrictive Fe50Co50 materials or with amorphous Fe-based alloys serving as sensing (or free) layers is discussed in view of possible applications. For MTJs prepared ex-situ with an amorphous FeCoSiB, free layer MR ratios of 33% are obtained leading to gauge factors GF = (DeltaR/R)/Deltaepsilon on the order of 300.
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