期刊
JOURNAL OF APPLIED PHYSICS
卷 118, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4932644
关键词
-
资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Laboratory Directed Research and Development project at Sandia National Laboratories
- Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC52-06NA25396]
- Sandia National Laboratories [DE-AC04-94AL85000]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据