4.6 Article

Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction

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JOURNAL OF APPLIED PHYSICS
卷 118, 期 13, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4932644

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资金

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
  2. Laboratory Directed Research and Development project at Sandia National Laboratories
  3. Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC52-06NA25396]
  4. Sandia National Laboratories [DE-AC04-94AL85000]
  5. U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]

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Superconductivity in topological materials has attracted a great deal of interest in both electron physics and material sciences since the theoretical predictions that Majorana fermions can be realized in topological superconductors. Topological superconductivity could be realized in a type II, band-inverted, InAs/GaSb quantum well if it is in proximity to a conventional superconductor. Here, we report observations of the proximity effect induced giant supercurrent states in an InAs/GaSb bilayer system that is sandwiched between two superconducting tantalum electrodes to form a superconductor-InAs/GaSb-superconductor junction. Electron transport results show that the supercurrent states can be preserved in a surprisingly large temperature-magnetic field (T-H) parameter space. In addition, the evolution of differential resistance in T and H reveals an interesting superconducting gap structure. (C) 2015 AIP Publishing LLC.

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