期刊
JOURNAL OF APPLIED PHYSICS
卷 118, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4931891
关键词
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资金
- National Natural Science Foundation of China [61204116, 61204112]
- Guangdong Provincial Natural Science Foundation [2014A030313656]
- Guangdong Science Fund for Distinguished Young Scholars [2015A030306002]
- Ph.D. Start-up Fund of Natural Science Foundation of Guangdong Province, China [2015A030310331]
In this paper, we investigate the degradation mode and mechanism of AlGaN/GaN based high electron mobility transistors (HEMTs) during high temperature operation (HTO) stress. It demonstrates that there was abrupt degradation mode of drain current during HTO stress. The abrupt degradation is ascribed to the formation of crack under the gate which was the result of the brittle fracture of epilayer based on failure analysis. The origin of the mechanical damage under the gate is further investigated and discussed based on top-down scanning electron microscope, cross section transmission electron microscope and energy dispersive x-ray spectroscopy analysis, and stress simulation. Based on the coupled analysis of the failure physical feature and stress simulation considering the coefficient of thermal expansion (CTE) mismatch in different materials in gate metals/semiconductor system, the mechanical damage under the gate is related to mechanical stress induced by CTE mismatch in Au/Ti/Mo/GaN system and stress concentration caused by the localized structural damage at the drain side of the gate edge. These results indicate that mechanical stress induced by CTE mismatch of materials inside the device plays great important role on the reliability of AlGaN/GaN HEMTs during HTO stress. (C) 2015 AIP Publishing LLC.
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