期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 49, 期 9, 页码 1657-1664出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2002.801290
关键词
power electronics; power semiconductor diodes; Schottky diodes
In order to select the optimal device for a particular application, designers must carefully analyze the tradeoffs between competing devices. Recent progress in SiC power rectifiers has resulted in the demonstration of high-voltage PiN and Schottky barrier diodes (SBDs). With both technologies maturing, power electronics engineers will soon face the task of selecting between these two devices. Until recently, the choice was simple, since silicon SBD)s are only available for relatively low voltage applications. The choice is not as clear when considering SiC diodes, and guidelines for determining the proper application of each are needed. The purpose of this paper is to provide such guidelines, based on an analysis of the most significant tradeoffs involved.
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