期刊
IEEE TRANSACTIONS ON MAGNETICS
卷 38, 期 5, 页码 2832-2834出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2002.802468
关键词
epitaxy; magnetoelastic materials; microelectromechanical systems (MEMS)
In order to incorporate magnetostrictive actuators into microelectromechanical systems devices, thin film magnetoelastic materials must have both a high magnetostriction and a low saturation field. This work focuses on the fabrication and characterization of (110) oriented epitaxial FeGa thin films grown epitaxtally on Cu on Si. The material in the bulk exhibits a large magnetostriction and in thin film form is here shown to be easily saturated in all in-plane orientations in fields under 500 Oe. Thin (less than 160 nm) FeGa films grow according to a single (110) variant on Cu(100)/Si(100). On the contrary, thick (160 nm) films exhibit multiple (110) variants.
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