期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 38, 期 9, 页码 1234-1237出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2002.802159
关键词
-
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 mum. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivtiy, D*, was 10(10) cm.Hz(1)/(2)/W.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据