Effects of heat treatment and sintering additives on thermal conductivity and electrical resistivity in fine-grained SiC ceramics

The effects of heat treatment and sintering additives on the thermal conductivity and electrical resistivity of fine-grained SiC materials were investigated. The thermal conductivity and the electrical resistivity of dense SiC materials were measured at room temperature by a laser flash technique and a current-voltage method, respectively. The results indicated that the thermal conductivity and electrical resistivity of the SiC materials were dependent on the sintering additives and the resultant microstructure. Annealed materials with oxide additives developed microstructures consisting of elongated grains of various alpha/beta-SiC polytypes. In contrast, annealed materials with oxynitride additives had microstructures consisting of fine equiaxed grains entirely of beta-SiC phase. For the annealed materials with oxide additives the observed thermal conductivity was over 110 W/mK. For the annealed materials with oxynitride additives the observed value was 47 W/mK. The electrical resistivity of a hot-pressed material with oxide sintering additives decreased after annealing. For annealed materials with oxynitride additives, the electrical resistivity was even lower. High-resolution electron microscopy revealed a thin amorphous phase along the grain boundaries. Energy dispersive x-ray spectroscopy results showed that there was segregation of both Al and O atoms and a very small amount of Y atoms at grain boundaries. The results indicated that the chemistry and structure of the grain boundary has significant influence on thermal and electrical properties in SiC.