期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 20, 期 5, 页码 1793-1807出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.1514665
关键词
-
This article reviews recent experiments on the modification of thiol-derived self-assembling monolayers (SAMs) by electron and x-ray irradiation. Several complementary experimental techniques such as near-edge x-ray absorption fine structure spectroscopy, x-ray photoelectron spectroscopy and microscopy, and infrared reflection absorption spectroscopy were applied to gain a detailed knowledge on the nature and extent of irradiation-induced damage in these systems. The reaction of a SAM to electron and x-ray irradiation was found to be determined by the interplay of the damage/decomposition and cross-linking processes. Ways to adjust the balance between these two opposing effects by molecular engineering of the SAM constituents are demonstrated. The presented data provide the physical-chemical basis for electron-beam patterning of self-assembled monolayers to extend lithography down to the nanometer scale. (C) 2002 American Vacuum Society.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据