期刊
APPLIED PHYSICS LETTERS
卷 81, 期 12, 页码 2202-2204出版社
AMER INST PHYSICS
DOI: 10.1063/1.1506794
关键词
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A method is developed for the fabrication of sub-100 nm current-perpendicular spin-valve junctions with low contact resistance. The approach is to use a batch-fabricated trilayer template with the junction features defined by a metal stencil layer and an undercut in the insulator. The spin-valve thin film stack is deposited afterwards into the stencil, with the insulator undercut providing the necessary magnetic isolation. Using this approach, reproducible spin-current-induced magnetic switching is demonstrated for junctions down to 50 nmx100 nm in size. (C) 2002 American Institute of Physics.
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