期刊
PHYSICAL REVIEW LETTERS
卷 89, 期 12, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.89.127401
关键词
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We study the influence of the carrier-envelope offset phase of few-cycle pulses on nonperturbative resonant extreme nonlinear optics in a semiconductor. If the Rabi frequency becomes comparable to the light frequency, the different Rabi sidebands interfere around twice the laser center frequency, giving rise to a signal which strongly depends on the carrier-envelope offset phase. This signature should be measurable in GaAs samples.
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