期刊
APPLIED PHYSICS LETTERS
卷 81, 期 12, 页码 2258-2260出版社
AMER INST PHYSICS
DOI: 10.1063/1.1507616
关键词
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We propose a displacement sensing scheme for rf mechanical resonators made from GaAs, based on detecting the piezoelectrically induced charge. By using a single-electron transistor to detect the charge, we calculate that a significantly higher displacement sensitivity can be achieved than by using capacitive displacement sensing, primarily due to the strong piezoelectric coupling strength. We estimate a displacement sensitivity of order 10(-17) m/Hz(1/2) for a 1 GHz GaAs resonator. Our model solves the coupled electromechanical response self-consistently, including the effects of both dissipative and reactive electronic circuit elements on the resonator behavior. (C) 2002 American Institute of Physics.
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