期刊
SOLID-STATE ELECTRONICS
卷 46, 期 10, 页码 1545-1551出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0038-1101(02)00103-X
关键词
device simulation; PLEDM; tunneling; quantum effects
We present simulations of a recently published multi-barrier phase-state low electron device memory cell. For the proper consideration of tunneling through the insulating barriers we implemented a one-dimensional Schrodinger solver based on the transfer-matrix formalism into the device simulator MINIMOS-NT. We investigate the effect of barrier size and position on the I-on/I-off ratio of the memory cell. We find that the position and thickness of the central shutter barrier can be used for device tuning. For high I-on/I-off ratios the central shutter barrier (CSB) should be placed Dear the upper contact. Furthermore, a reduction in the stack width leads to increasing I-on/I-off ratios. Although the use of the transfer-matrix method in a device simulator requires a number of assumptions, it turns out to be a viable tool for deepening the understanding of tunneling effects in devices where other tunneling models fail. (C) 2002 Elsevier Science Ltd. All rights reserved.
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