期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 74, 期 1-4, 页码 275-281出版社
ELSEVIER
DOI: 10.1016/S0927-0248(02)00085-5
关键词
MIC; Ni; thin film; polycrystalline silicon
We prepared a thin-film polycrystalline silicon solar cell using metal-induced crystallization (MIC) of an amorphous silicon film and a thin Ni layer. The MIC using a 0.6-nm-thick Ni layer produced a highly activated n-type crystalline layer at a 550degreesC annealing temperature. The Ni concentration in the i-layer of a solar cell prepared by successively depositing i- and p-layers on an MIC n-layer using plasma-enhanced CVD was lower than 1x10(16)/cm(3). This solar cell was highly responsive in the long-wavelength region of its quantum efficiency, indicating that the n/i interface and i-layer region near the n-layer were of high quality. (C) 2002 Elsevier Science B.V. All rights reserved.
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