期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 63, 期 10, 页码 1909-1920出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/S0022-3697(02)00177-4
关键词
oxides; semiconductors; ab initio calculations; defects; electronic structure
The electronic structures of titanium dioxide (TiO2) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO2 is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the 0 p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t(2g) state of the dopant plays a significant role in the photoresponse of TiO2 under visible light irradiation. (C) 2002 Elsevier Science Ltd. All rights reserved.
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