期刊
JOURNAL OF APPLIED PHYSICS
卷 92, 期 7, 页码 3730-3739出版社
AMER INST PHYSICS
DOI: 10.1063/1.1503165
关键词
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In this article, we present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the nonequilibrium Green's function equations self-consistently with Poisson's equation, is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results from this method are benchmarked against solutions from a rigorous two-dimensional discretization of the device Hamiltonian in real space. While doing so, the inherent approximations, regime of validity and the computational efficiency of the mode-space solution are highlighted and discussed. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This article shows that the decoupled mode-space solution is an efficient and accurate simulation method for modeling electron transport in nanoscale, silicon-on-insulator transistors. (C) 2002 American Institute of Physics.
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