期刊
APPLIED PHYSICS LETTERS
卷 81, 期 15, 页码 2722-2724出版社
AMER INST PHYSICS
DOI: 10.1063/1.1512331
关键词
-
Thin low-temperature AlN interlayers can be applied to reduce stress to grow thick crack-free AlGaN layers on GaN buffer layers on sapphire and thick crack-free GaN layers on Si. The mechanism leading to stress reduction is investigated by high resolution x-ray diffractometry measurements on metalorganic chemical vapor phase epitaxy grown samples on Si(111) with different interlayer deposition temperatures. A decrease of tensile stress with decreasing interlayer growth temperature is observed. From reciprocal space maps we conclude that interlayers grown at high temperatures are pseudomorphic, while grown at lower temperatures they are relaxed. Therefore, AlGaN or GaN layers grown on a low temperature AlN interlayer grow under compressive interlayer-induced strain. The stress in the GaN layer depends on the growth temperature that likely controls the amount of AlN interlayer relaxation. (C) 2002 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据