Origin of spectral broadening in π-conjugated amorphous semiconductors -: art. no. 155206

We present a study of the picosecond fluorescence dynamics of pi-conjugated semiconducting organic dendrimers in the solid state. By varying the degree of branching within the dendrons, referred to as the dendrimer generation, a control of intermolecular spacing of the emissive core and therefore of the lattice parameter for Forster-type energy transfer is achieved. This allows a distinction between spectral diffusion and excimer formation as the two main sources of spectral broadening in organic semiconductors. Whereas Forster-type dispersive spectral relaxation is independent of temperature but strongly dependent on the interchromophore distance, excimer formation is also strongly thermally activated due to temperature-dependent conformational changes and the influence of thermally activated dynamic disorder. The rapid spectral diffusion allows a determination of the excimer rise in the emission, which is shown to have a profound impact on the steady state luminescence properties of dendrimer films. We show that the dendrimer generation not only allows a microscopic control of intermolecular interactions but also a direct control of the rate of spectral diffusion. Implications for the design of novel materials for optoelectronic devices are discussed.