期刊
APPLIED PHYSICS LETTERS
卷 81, 期 17, 页码 3212-3214出版社
AMER INST PHYSICS
DOI: 10.1063/1.1515879
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Alternate layer deposition of heterostructured magnesium oxide (MgO):barium strontium titanate (BST) thin films is demonstrated to be an approach to synthesize dielectric films with a higher figure of merit for microwave dielectric applications. The dielectric constant and the dielectric tunability are modified by MgO insertion. The dramatic reduction in the dielectric loss tangent effectively increased the figure of merit of the heterostructured thin films as compared to the pure BST films. The significant reduction in the dielectric loss tangent values has been attributed to the minute solid solubility of MgO in the BST lattice and the induced microstructural modifications induced by the MgO layers in thin films. (C) 2002 American Institute of Physics.
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