期刊
APPLIED PHYSICS LETTERS
卷 81, 期 17, 页码 3260-3262出版社
AMER INST PHYSICS
DOI: 10.1063/1.1516633
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Molecular memory devices with semiconducting single-walled carbon nanotubes constituting a channel of 150 nm in length are described. Data storage is achieved by sweeping gate voltages in the range of 3 V, associated with a storage stability of more than 12 days at room temperature. By annealing in air or controlled oxygen plasma exposure, efficient switching devices could be obtained from thin nanotube bundles that originally showed only a small gate dependence of conductance. (C) 2002 American Institute of Physics.
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