期刊
APPLIED PHYSICS LETTERS
卷 81, 期 17, 页码 3257-3259出版社
AMER INST PHYSICS
DOI: 10.1063/1.1515883
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We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior. (C) 2002 American Institute of Physics.
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