期刊
APPLIED PHYSICS LETTERS
卷 81, 期 18, 页码 3491-3493出版社
AMER INST PHYSICS
DOI: 10.1063/1.1518155
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We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70degreesC at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement. (C) 2002 American Institute of Physics.
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