Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN

As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L-3-edge. The angle dependence of the XANES spectra shows that the Ga-N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. (C) 2002 American Institute of Physics.