期刊
SOLID STATE SCIENCES
卷 4, 期 11-12, 页码 1521-1527出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S1293-2558(02)00048-1
关键词
B/C/N material; chemical vapor deposition; nickel single crystal; hetero epitaxy; catalyst
Thin films of crystalline B/C/N materials were deposited on nickel(111) single crystal by low pressure chemical vapor deposition (LPCVD) using acrylonitrile and boron trichloride as starting materials at temperatures between 823-1123 K under the pressure of 10(3) Pa. The WON thin film obtained at 823 K was gold in color. RHEED analysis indicates that the film obtained at 823 K was polycrystalline with a random orientation, while films obtained at 923-1123 K were formed of single crystals having a graphite-like structure. ESCA spectra suggested that in the films boron, carbon, and nitrogen atoms were bound in a layered structure. The results of RHEED and ESCA suggest that Ni(111) could play the decisive role of a substrate for hetero-epitaxial growth as well as a catalyst for the formation of crystalline B/C/N film. (C) 2002 Editions scientifiques et medicales Elsevier SAS. All rights reserved.
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