Microwave noise performance of AlGaN-GaNHEMTs with small DC power dissipation

We report low microwave, noise performance of discrete AlGaN-GaN HEMTs at dc power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and dc power dissipation of 97 mW/mm, minimum noise figures (NFmin) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small dc power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 mum in. 0.15-mum gate length GaN HEMTs. By comparison, NFmin with 2 mum SD spacing was 0.2 dB greater at 10 GHz.