期刊
INTERNATIONAL JOURNAL OF THERMOPHYSICS
卷 23, 期 6, 页码 1645-1657出版社
KLUWER ACADEMIC/PLENUM PUBL
DOI: 10.1023/A:1020750203199
关键词
amorphous silicon films; interface thermal resistance; scanning thermal microscopy
Thermal conductivity measurements of thin amorphous silicon films performed with a micro-thermistance mounted on an atomic force microscope are presented. A specific thermal model is implemented, and an identification procedure is proposed to extract the film contribution from the apparent thermal conductivity. Results show agreement with the literature regarding interface resistance data, but lower thermal conductivity values are obtained.
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