4.3 Article

Thermal conductivity measurements of thin amorphous silicon films by scanning thermal microscopy

期刊

INTERNATIONAL JOURNAL OF THERMOPHYSICS
卷 23, 期 6, 页码 1645-1657

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KLUWER ACADEMIC/PLENUM PUBL
DOI: 10.1023/A:1020750203199

关键词

amorphous silicon films; interface thermal resistance; scanning thermal microscopy

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Thermal conductivity measurements of thin amorphous silicon films performed with a micro-thermistance mounted on an atomic force microscope are presented. A specific thermal model is implemented, and an identification procedure is proposed to extract the film contribution from the apparent thermal conductivity. Results show agreement with the literature regarding interface resistance data, but lower thermal conductivity values are obtained.

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