期刊
APPLIED PHYSICS LETTERS
卷 81, 期 19, 页码 3666-3668出版社
AMER INST PHYSICS
DOI: 10.1063/1.1519100
关键词
-
We report on AlGaN single-quantum-well light-emitting diodes (LEDs) on sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling the device quantum efficiency. At room temperature, for a 200 mumx200 mum square geometry mesa type device, we obtain a power as high as 0.25 mW for 650 mA pulsed pumping. The LEDs show significantly higher output powers at temperatures below 100 K. (C) 2002 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据