期刊
PHYSICAL REVIEW B
卷 66, 期 20, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.66.205209
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The vibrational and electronic properties of Ga1-xMnxAs layers with Mn fractions 0less than or equal toxless than or equal to2.8%, grown on GaAs(001) substrates by low-temperature molecular-beam epitaxy, are investigated by micro-Raman spectroscopy and far-infrared (FIR) reflectance spectroscopy. The Raman and FIR spectra are strongly affected by the formation of a coupled mode of the longitudinal optical phonon and the hole plasmon. The spectral line shapes are modeled using a dielectric function where intraband and interband transitions of free holes are included. In addition to the coupled mode, the contributions of a surface depletion layer as well as a symmetry forbidden TO phonon have to be taken into account for the Raman spectra. Values for the hole densities are estimated from a full line-shape analysis of the measured spectra. Annealing at temperatures between 250 and 500 degreesC results in a decrease of the hole density with increasing annealing temperature and total annealing time. Simultaneously, a reduction of the fraction of Mn atoms on Ga lattice sites is deduced from high-resolution x-ray diffraction.
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