期刊
PHYSICAL REVIEW B
卷 66, 期 19, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.66.195336
关键词
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We present a density of state model for the transport properties of pentacene field effect transistors. Using a one-dimensional transistor model we study the effect of different localized trap distributions on the current-voltage characteristics of such devices. We find that a distributed trap model with a steep exponential band tail of donors and a shallower exponential tail of acceptors inside the band gap can describe consistently our experimental data obtained from bottom-gate polycrystalline pentacene transistors for different gate dielectrics and under various external conditions.
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