期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 1, 期 4, 页码 195-200出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2002.807392
关键词
charge carrier processes; lithography; MOSFETs; semiconductor device doping; semiconductor device modeling; stochastic processes
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed atomistic drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulations. Various sources of intrinsic parameter fluctuations, including random discrete dopants in the source/drain regions, single dopant or charged defect state in the channel region and gate line edge roughness, are studied in detail.
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