Electrochemical capacitance in manganese thin films with chevron microstructure

Initial characterization of the electrochemical performance of obliquely deposited manganese films with a chevron microstructure, for potential application as electrochemical capacitor materials, has demonstrated that Mn deposited in porous metallic form with subsequent electrochemical oxidation provides a route to forming pseudocapacitive Mn-based materials. The oxidation step and capacitance measurements were performed in sequence using the same electrolyte (0.1 M Na2SO4) and electrode setup. Chevron-structured films of manganese were characterized by field emission scanning electron microscopy, cyclic voltammetry, Brunauer-Emmett-Teller method adsorption, and by mass and thickness measurement. Faradaic capacitance behavior with a moderate specific capacitance as high as 256 F/g was observed in combination with relatively low measured surface areas on the order of 6 m(2)/g. (C) 2002 The Electrochemical Society.