期刊
APPLIED PHYSICS LETTERS
卷 81, 期 23, 页码 4401-4403出版社
AMER INST PHYSICS
DOI: 10.1063/1.1526916
关键词
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Nanosized inverted domain dots in ferroelectric materials have potential applications in ultrahigh-density rewritable data storage systems. Here, a data storage system based on scanning nonlinear dielectric microscopy and thin films of ferroelectric single-crystal lithium tantalite is presented. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density of 1.50 Tbit/in.(2). (C) 2002 American Institute of Physics.
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