期刊
SURFACE SCIENCE
卷 521, 期 1-2, 页码 10-25出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0039-6028(02)02250-1
关键词
scanning tunneling microscopy; surface diffusion; copper; indium; surface defects
We have used the indium/copper surface alloy to study the dynamics of surface vacancies on the Cu(001) surface. Individual indium atoms that are embedded within the first layer of the crystal, are used as probes to detect the rapid diffusion of surface vacancies. STM measurements show that these indium atoms make multi-lattice-spacing jumps separated by long time intervals. Temperature dependent waiting time distributions show that the creation and diffusion of thermal vacancies form an Arrhenius type process with individual long jumps being caused by one vacancy only. The length of the long jumps is shown to depend on the specific location of the indium atom and is directly related to the lifetime of vacancies at these sites on the surface. This observation is used to expose the role of step edges as emitting and absorbing boundaries for vacancies. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据