4.6 Article

Electronic structure of multiwall boron nitride nanotubes

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PHYSICAL REVIEW B
卷 67, 期 3, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.67.035429

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We report on electron energy-loss spectroscopy studies of the electronic properties of multiwall boron nitride nanotubes, in terms of the B1s and N1s excitation edges and of the q-dependent energy-loss function. The q-dependent dielectric function shows a strong dispersion in momentum of the pi and sigma+pi plasmons indicating that they are spatially delocalized along the tube axis as expected according to their characteristic two-dimensional graphiticlike structure, and nondispersing excitations at 11 and 12 eV. The dielectric function epsilon of the boron nitride nanotubes reveals an intense pi-pi* interband transition at 5.4 eV, which is shifted to lower energies by 0.6 eV when compared to hexagonal BN in good agreement with recent theoretical band-structure calculations of boron nitride nanotubes.

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