Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers

In this paper we demonstrate the use of red laser illumination to stimulate charge carriers in semiconductor layers with very low residual carrier densities, to eliminate surface potential changes during SIMS depth profiling. We show that very simple quantification protocols can be used for Ge assay, at least up to Ge fractions of 30%. (C) 2002 Elsevier Science B.V. All rights reserved.