期刊
APPLIED SURFACE SCIENCE
卷 203, 期 -, 页码 56-61出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/S0169-4332(02)00658-X
关键词
SIMS; RBS; transient region; sputter yield; SiGe; oxygen bombardment
By combining in situ SIMS/RBS measurements, sputter yields variations and ionisation probability variations were measured in the transient region of a poly-Si0.8Ge0.2 layer bombarded with 12 keV O-2(+) at normal incidence. The goal of the experiment is to investigate if the prepeak in the Ge+ SIMS signal could be explained by sputter yield variations. The result of the experiment shows a minimum in the sputter yield variation of Ge during the build-up of the altered layer, which does not coincide with the minimum of the Ge+-signal. This suggests that the prepeak is not only a sputter yield effect but also due to a change in ionisation probability. (C) 2002 Elsevier Science B.V. All rights reserved.
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