期刊
出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/S0921-5107(02)00406-3
关键词
ZnO; RF sputtering magnetron; piezoelectric; X-ray diffraction
ZnO thin films were deposited on sapphire, glass and silicon substrates by r.f. magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of substrate temperature on the film structural properties. They exhibited a c-axis orientation of below 0.5degrees full width at half maximum of X-ray rocking curves, an extremely high resistivity of 10(10) Omega cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100 degreesC and target/substrate distance about 50 mm, very low gas pressures of 3.35 x 10(-3) Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. (C) 2002 Elsevier Science B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据