期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 42, 期 1A-B, 页码 L20-L23出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.42.L20
关键词
GaN; InGaN; LEDs; YAG; SCESN; phosphor; MOCVD; sapphire
We fabricated a high-color-rendering, red-enhanced white-light-emitting diode (LED) using a new red phosphor and a short-wavelength YAG phosphor. When the new white-LED was operated at a forward-bias current of 20 mA at room temperature (RT), color temperature (T-cp), the general color rendering index (R-a) and luminous efficiency were 4670 K, 87.7 and 25.5 lm/W, respectively. Most of the color-rendering indexes (CRIs) of the new white-LED were larger than those of current white-LEDs, in which only YAG is used. In particular, the CRI-No.9 value, which shows the color reproduction in the red region, is improved from -2.5 to 62.6.
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