期刊
PHYSICAL REVIEW LETTERS
卷 90, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.90.026103
关键词
-
Using first-principles calculations, we develop a theory for ultrahigh impurity doping in semiconductors. Our study of B in Si explains why boron solubility in epitaxial growth could exceed the solid solubility to reach the kinetic solubility, and, with adequate surface passivation, to reach even higher values. We further show that the partial ionization at high B concentration, C-B, observed by experiment is predominantly an electron chemical potential effect, not a boron clustering effect. Our calculated hole concentration over a wide C-B range is in reasonable agreement with experiments.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据