Lasing from InGaAs quantum dots in an injection microdisk

An injection microdisk laser structure is realized using self-assembled InGaAs quantum dots (QDs) as the active layer. Single-mode continuous-wave lasing at similar to5 K from double layer (similar to2.5x10(10) cm(-2) per layer) QDs in similar to4 mum diameter microdisks is reported. The threshold current of this device was as low as 69 muA. The estimated spontaneous emission factor is >0.05. (C) 2003 American Institute of Physics.