Ge-doped silica-on-silicon waveguides with index steps of 0.01 and 0.02 were fabricated by a combination of plasma enhanced chemical vapour deposition (PECVD) and reactive ion etching (RIE) techniques, and their characteristics, including propagation loss, coupling loss with standard singlemode fibres, minimal bend radius, and birefringence, were investigated. The waveguides have good propagation properties and small birefringence, compared to using flame hydrolysis deposition (FHD).
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据