Amorphous carbon nitride deposition by nitrogen radical sputtering C+N+O+H

Amorphous carbon nitride films a-CNx were prepared by a nitrogen radical sputtering of a carbon target. A-CNx films were treated by atomic hydrogen or by an oxygen plasma, using a layer-by-layer method, forming LLa-CNx or LLa-CNxOy. These a-CNx films show large photosensitivity, high resistivity and low dielectric constants. Possible applications are also discus sed briefly. (C) 2003 Elsevier Science B.V. All rights reserved.