Modeling of transport in polycrystalline organic semiconductor films

We propose a grain-boundary barrier model with an energy distribution of interfacial traps to describe charge transport in polycrystalline organic thin films. The model is applied to the interpretation of charge transport in unintentionally doped pentacene films. It gives an acceptable explanation for the concomitant increase in threshold voltage and mobility, and allows an understanding of the difference between the dopant-concentration and gate-voltage dependences of the mobility. (C) 2003 American Institute of Physics.