Pores in III-V semiconductors

Electrochemically etched pores in III-V semiconductors are dynamic systems which exhibit a remarkable degree of self-organized pattern formation and give rise to a wealth of new properties, in particular large nonlinear optical effects. Ibis Review article emphasizes their nucleation, formation mechanisms, pore morphologies and self-organization. The Figure, a collage of individual SEM micrographs, shows a 3D-periodical self-arranged InP single-pore crystal.