期刊
APPLIED PHYSICS LETTERS
卷 82, 期 8, 页码 1197-1199出版社
AMER INST PHYSICS
DOI: 10.1063/1.1556966
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Lanthanum aluminate (LaAlO3) films were deposited on Si(100) substrates by a molecular beam deposition method with an electron beam gun and annealed typically in N-2 atmosphere at 800 degreesC for 1 min. Reflection high-energy electron diffraction observation as well as x-ray diffraction analysis showed that the crystalline quality of the LaAlO3 films was amorphous, even after annealing at 800 degreesC. It was also found from x-ray fluorescence measurements that the ratio of La-to-Al for LaAlO3 films was almost 1:1. The dielectric constant of LaAlO3 films was estimated to be 20-25 and the leakage current density was improved by about eight orders of magnitude in maximum after the annealing process. (C) 2003 American Institute of Physics.
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